EPA030C/EPA030Cv updated 10/24/2006 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2006 features ? +23dbm typical output power ? 11db typical power gain for EPA030C and 12.0db for EPA030Cv at 18ghz ? 0.3 x 300 micron rece ssed ?mushroom? gate ? si 3 n 4 passivation and plated heat sink ? advanced epitaxial doping profile provides high power efficiency and reliability ? EPA030Cv with via hole source grounding ? idss sorted in 10ma per bin range chip thickness: 75 13 microns (EPA030C) chip thickness: 85 15 microns (EPA030Cv) : via hole no via hole for EPA030C all dimensions in microns electrical characteristics (t a = 25 c) caution! esd sensitive device . EPA030C EPA030Cv unit symbols parameters/test conditions min typ max min typ max 21.0 23.0 21.0 23.0 p 1db output power at 1db compression f = 12ghz v ds = 8v, i ds 50% i dss f = 18ghz 23.0 23.0 dbm 12.0 13.5 12.5 14.0 g 1db gain at 1db compression f = 12ghz v ds = 8v, i ds 50% i dss f = 18ghz 11.0 12.0 db pae power added efficiency at 1db compression v ds = 8v, i ds 50% i dss f = 12ghz 45 46 % i dss saturated drain current v ds = 3v, v gs = 0v 50 90 130 50 90 130 ma g m transconductance v ds = 3v, v gs = 0v 60 95 60 95 ms v p pinch-off voltage v ds = 3 v, i ds = 1.0 ma -1.0 -2.5 -1.0 -2.5 v bv gd drain breakdown voltage i gd = 1.0ma -13 -15 -13 -15 v bv gs source breakdown voltage i gs = 1.0ma -7 -14 -7 -14 v r th thermal resistance(au-sn eutectic attach) 125 95 o c/w maximum ratings at 25 o c EPA030C EPA030Cv symbols parameters absolute 1 continuous 2 absolute 1 continuous 2 v ds drain-source voltage 10v 8v 10v 8v v gs gate-source voltage -5v -3v -5v -3v igf forward gate current 1.4ma 0.5ma 1.4ma 0.5ma igr reverse gate current -0.2ma -0.1ma -0.2ma -0.1ma pin input power 20dbm @ 3db compression 20dbm @ 3db compression tch channel temperature 175 o c 175 o c 175 o c 175 o c tstg storage temperature -65/175 o c -65/175 o c -65/175 o c -65/175 o c pt total power dissipation 1.1w 1.1w 1.5w 1.5w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals.
EPA030C/EPA030Cv updated 10/24/2006 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2006 s-parameters EPA030C 8v, ? idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang 1.0 0.975 -23.9 7.888 162.4 0.017 76.0 0.750 -9.3 21.0 0.850 130.8 1.761 -0.7 0.069 -18.3 0.404 -121.6 2.0 0.951 -46.7 7.419 147.5 0.032 63.5 0.726 -18.3 22.0 0.854 128.3 1.647 -5.9 0.068 -18.6 0.416 -129.4 4.0 0.883 -85.5 6.169 121.3 0.053 44.0 0.643 -32.0 24.0 0.858 123.8 1.466 -16.0 0.067 -19.4 0.449 -142.5 6.0 0.840 -114.7 4.993 100.9 0.063 30.0 0.577 -41.6 26.0 0.857 120.7 1.336 -25.3 0.067 -16.9 0.489 -153.1 8.0 0.814 -136.9 4.125 84.2 0.067 19.6 0.535 -49.6 28.0 0.860 116.0 1.241 -34.9 0.070 -17.2 0.515 -162.6 10.0 0.801 -154.1 3.495 70.1 0.068 11.2 0.504 -57.1 30.0 0.861 108.2 1.160 -45.6 0.073 -19.5 0.533 -173.0 12.0 0.797 -169.5 3.041 56.7 0.067 4.5 0.479 -65.6 32.0 0.871 98.2 1.071 -56.8 0.072 -23.7 0.552 175.1 14.0 0.791 175.9 2.700 43.7 0.068 -1.9 0.453 -75.2 34.0 0.895 88.7 0.959 -68.0 0.068 -28.5 0.579 161.5 16.0 0.800 160.9 2.425 30.4 0.069 -7.5 0.434 -86.1 36.0 0.952 81.3 0.858 -79.0 0.072 -36.4 0.642 146.1 18.0 0.816 146.4 2.155 17.0 0.070 -12.1 0.411 -98.4 38.0 1.015 74.8 0.765 -91.0 0.073 -51.4 0.702 130.2 20.0 0.832 133.9 1.913 4.3 0.071 -17.8 0.400 -111.3 40.0 1.002 70.1 0.650 -103.1 0.072 -70.2 0.725 119.1 s-parameters EPA030Cv 8v, ? idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang 1.0 0.988 -25.7 7.512 161.8 0.018 75.1 0.778 -9.1 21.0 0.869 130.7 1.524 -5.5 0.069 -26.1 0.425 -115.0 2.0 0.959 -49.8 7.041 146.0 0.034 62.8 0.748 -17.5 22.0 0.875 127.1 1.428 -11.3 0.069 -27.6 0.430 -122.2 4.0 0.888 -91.2 5.765 118.4 0.054 40.8 0.666 -30.0 24.0 0.891 120.3 1.260 -22.6 0.066 -30.9 0.444 -137.9 6.0 0.837 -125.9 4.662 96.0 0.064 25.3 0.599 -38.2 26.0 0.899 114.0 1.103 -33.8 0.063 -34.5 0.470 -153.9 8.0 0.834 -145.7 3.804 80.1 0.067 15.8 0.545 -43.7 28.0 0.905 109.4 0.955 -44.4 0.061 -35.8 0.505 -169.2 10.0 0.829 -162.2 3.181 65.7 0.068 6.8 0.496 -50.1 30.0 0.906 104.4 0.841 -55.7 0.057 -42.1 0.534 175.4 12.0 0.834 176.4 2.692 50.1 0.068 -2.3 0.466 -58.5 32.0 0.909 100.5 0.735 -66.9 0.054 -50.6 0.569 161.2 14.0 0.847 162.9 2.305 36.9 0.065 -8.7 0.436 -69.7 34.0 0.929 96.5 0.647 -77.2 0.051 -54.3 0.612 149.5 16.0 0.861 150.4 1.987 23.9 0.065 -14.2 0.432 -82.3 36.0 0.967 93.1 0.604 -85.6 0.051 -61.8 0.684 140.0 18.0 0.869 146.0 1.782 12.9 0.068 -18.3 0.418 -98.3 38.0 0.985 88.7 0.559 -96.0 0.063 -75.7 0.726 130.9 20.0 0.867 136.7 1.590 1.0 0.069 -23.3 0.426 -110.4 40.0 0.986 85.8 0.506 -106.2 0.072 -93.8 0.757 123.9 note: the data included 0.7 mil diameter au bonding wires; 1gate wire, 15 mils each; 1 drain wire, 20 mils each; 4 source wires, 7 mils each; no source wires for EPA030Cv.
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